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 GS78108AB
BGA Commercial Temp Industrial Temp Features
* Fast access time: 8, 10, 12 ns * CMOS low power operation: 240/190/170 mA at minimum cycle time * Single 3.3 V 0.3 V power supply * All inputs and outputs are TTL-compatible * Fully static operation * Industrial Temperature Option: -40 to 85C * 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array package * RoHS-compliant package available
1M x 8 8Mb Asynchronous SRAM
8, 10, 12 ns 3.3 V VDD
Symbol
A0 to A19 DQ1 to DQ8 CE WE OE VDD VSS NC
Pin Descriptions Description
Address input Data input/output Chip enable input Write enable input Output enable input +3.3 V power supply Ground No connect
Description
The GS78108A is a high speed CMOS Static RAM organized as 1,048,576-words by 8-bits. Static design eliminates the need for external clocks or timing strobes. The GS78108operates on a single 3.3 V power supply, and all inputs and outputs are TTL-compatible. The GS7810A8 is available in a 14 mm x 22 mm BGA package.
Block Diagram
A0 Address Input Buffer
Row Decoder
Memory Array
A19 CE WE OE
Column Decoder
Control
I/O Buffer
DQ1
DQ8
Rev: 1.04 5/2006
1/11
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
1M x 8 Async SRAM in Bump, 14x22mm BGA--Top View (Package B)
1 A B C D E F G H J K L M N P R T U NC NC NC NC NC NC DQ1 DQ2 VDD DQ3 DQ4 NC NC NC NC NC A18 2 A15 A11 NC VDD NC VDD NC VDD VSS VDD NC VDD NC VDD NC A7 A3 3 A14 A10 VDD, NC VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS NC A6 A2 4 A16 CE A17 VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC WE OE 5 A13 A9 VSS, NC VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS NC A5 A1 6 A12 A8 NC VDD NC VDD NC VDD VSS VDD NC VDD NC VDD NC A4 A0 7 NC NC NC NC NC NC DQ5 DQ6 VDD DQ7 DQ8 NC NC NC NC NC A19
Note: Bumps 3C and 5C are actually NC's but should be wired 3C = VDD and 5C = Vss to assure compatibility with future versions.
Rev: 1.04 5/2006
2/11
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Truth Table CE
H L L L X: "H" or "L"
OE
X L X H
WE
X H L H
DQ1 to DQ8
Not Selected Read Write High Z
VDD Current
ISB1, ISB2 -- IDD --
Absolute Maximum Ratings Parameter
Supply Voltage Input Voltage Output Voltage Allowable power dissipation Storage temperature
Symbol
VDD VIN VOUT PD TSTG
Rating
-0.5 to +4.6 -0.5 to VDD +0.5 ( 4.6 V max.) -0.5 to VDD +0.5 ( 4.6 V max.) 1.5 -55 to 150
Unit
V V V W
o
C
Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions Parameter
Supply Voltage for -8/10/12 Input High Voltage Input Low Voltage Ambient Temperature, Commercial Range Ambient Temperature, Industrial Range
Symbol
VDD VIH VIL TAc TAi
Min
3.0 2.0 -0.3 0 -40
Typ
3.3 -- -- -- --
Max
3.6 VDD +0.3 0.8 70 85
Unit
V V V
o
C C
o
Notes: 1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns. 2. Input undershoot voltage should be greater than -2 V and not exceed 20 ns.
Rev: 1.04 5/2006
3/11
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Capacitance Parameter
Input Capacitance Output Capacitance
Symbol
CIN COUT
Test Condition
VIN = 0 V VOUT = 0 V
Max
10 7
Unit
pF pF
Notes: 1. Tested at TA = 25C, f = 1 MHz 2. These parameters are sampled and are not 100% tested
DC I/O Pin Characteristics Parameter
Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage
Symbol
IIL IOL VOH VOL
Test Conditions
VIN = 0 to VDD Output High Z, VOUT = 0 to VDD IOH = -4 mA IOL = +4 mA
Min
-2 uA -1 uA 2.4
Max
2 uA 1 uA
0.4 V
Power Supply Currents Parameter Symbol Test Conditions
E VIL All other inputs VIH or VIL Min. cycle time IOUT = 0 mA E VIH All other inputs VIH or VIL Min. cycle time E VDD - 0.2V All other inputs VDD - 0.2V or 0.2V
0 to 70C 8 ns 10 ns 12 ns 8 ns
-40 to 85C 10 ns 12 ns
Operating Supply Current
IDD
160 mA
130 mA
115 mA
180 mA
150 mA
135 mA
Standby Current
ISB1
60 mA
50 mA
50 mA
80 mA
70 mA
70 mA
Standby Current
ISB2
20 mA
40 mA
Rev: 1.04 5/2006
4/11
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
AC Test Conditions Parameter
Input high level Input low level Input rise time Input fall time Input reference level Output reference level Output load
Conditions
VIH = 2.4 V VIL = 0.4 V tr = 1 V/ns tf = 1 V/ns 1.4 V 1.4 V Fig. 1& 2
Output Load 1
DQ 50 VT = 1.4 V 30pF1
Output Load 2
3.3 V DQ 5pF1 589 434
Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted 3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ.
AC Characteristics
Read Cycle
Parameter Read cycle time Address access time Chip enable access time (CE) Output enable to output valid (OE) Output hold from address change Chip enable to output in low Z (CE) Output enable to output in low Z (OE) Chip disable to output in High Z (CE) Output disable to output in High Z (OE) Symbol tRC tAA tAC tOE tOH tLZ* tOLZ* tHZ* tOHZ* -8 Min 8 -- -- -- 3 3 0 -- -- Max -- 8 8 3.5 -- -- -- 4 3.5 Min 10 -- -- -- 3 3 0 -- -- -10 Max -- 10 10 4 -- -- -- 5 4 Min 12 -- -- -- 3 3 0 -- -- -12 Max -- 12 12 5 -- -- -- 6 5 Unit ns ns ns ns ns ns ns ns ns
Rev: 1.04 5/2006
5/11
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Read Cycle 1:CE = OE = VIL
tRC Address tAA tOH Data Out Previous Data Data valid
* These parameters are sampled and are not 100% tested
Write Cycle
Parameter Write cycle time Address valid to end of write Chip enable to end of write Data set up time Data hold time Write pulse width Address set up time Write recovery time (WE) Write recovery time (CE) Output Low Z from end of write Write to output in High Z Symbol tWC tAW tCW tDW tDH tWP tAS tWR tWR1 tWLZ* tWHZ* -8 Min 8 5.5 5.5 4 0 5.5 0 0 0 3 -- Max -- -- -- -- -- -- -- -- -- -- 3.5 Min 10 7 7 5 0 7 0 0 0 3 -- -10 Max -- -- -- -- -- -- -- -- -- -- 4 Min 12 8 8 6 0 8 0 0 0 3 -- -12 Max -- -- -- -- -- -- -- -- -- -- 5 Unit ns ns ns ns ns ns ns ns ns ns ns
Rev: 1.04 5/2006
6/11
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Write Cycle 1: WE Controlled
tWC Address tAW OE tCW CE tAS WE tDW Data In tWHZ Data Out
High impedance Data valid
tWR
tWP tDH
tWLZ
Write Cycle 2: CE Controlled
tWC Address tAW OE tAS CE WE tWP tDW Data In Data Out
Data valid
tWR1 tCW
tDH
High impedance
Rev: 1.04 5/2006
7/11
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Package Dimensions--119-Bump FPBGA (Package B, Variation 1) (Date Code: yyww.31)
Pin #1 Corner
BOTTOM VIEW A1 O0.10S C O0.30S C AS B S O0.60~0.90 (119x)
1 2 3 45 6 7
A B C D E F G H J K L M N P R T U
O1.00(3x) REF
7 6 5 43 2 1
A B C D E F G H J K L M N P R T U
220.20
19.50
0.70 REF
12.00
B 1.27 7.62 A 0.20(4x) 140.20
0.900.10 0.15 C
0.560.05
Rev: 1.04 5/2006
0.50~0.70 2.06.0.13
C
SEATING PLANE
0.15 C
30 TYP.
8/11
20.32
1.27
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Package Dimensions--119-Bump FPBGA (Package B, Variation 2) (Date Code: yyww.3H)
A1 1
A B C D E F G H J K L M N P R T U
TOP VIEW
BOTTOM VIEW A1 O0.10S C O0.30S C AS B S O0.60~0.90 (119x)
2
3
4
5
6
7
7 6 5 43 2 1
A B C D E F G H J K L M N P R T U
220.10
B 1.27 7.62 0.15 C A 0.20(4x) 140.10
Rev: 1.04 5/2006
0.50~0.70 1.86.0.13
C
SEATING PLANE
9/11
20.32
1.27
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Ordering Information Part Number1
GS78108AB-8 GS78108AB-10 GS78108AB-12 GS78108AB-8I GS78108AB-10I GS78108AB-12I GS78108AB-15I GS78108AGB-8
Package
119-Bump BGA2 119-Bump BGA2 119-Bump BGA2 119-Bump BGA2 119-Bump BGA2 119-Bump BGA2 119-Bump BGA2 RoHS-compliant 119-Bump BGA2 RoHS-compliant 119-Bump BGA2 RoHS-compliant 119-Bump BGA2 RoHS-compliant 119-Bump BGA2 RoHS-compliant 119-Bump BGA2 RoHS-compliant 119-Bump BGA2 RoHS-compliant 119-Bump BGA2
Access Time
8 ns 10 ns 12 ns 8 ns 10 ns 12 ns 15 ns 8 ns
Temp. Range
Commercial Commercial Commercial Industrial Industrial Industrial Industrial Commercial
Status
GS78108AGB-10
10 ns
Commercial
GS78108AGB-12
12 ns
Commercial
GS78108AGB-8I
8 ns
Industrial
GS78108AGB-10I
10 ns
Industrial
GS78108AGB-12I
12 ns
Industrial
GS78108AGB-15I
15 ns
Industrial
Notes: 1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. For example: GS78108AB-12T 2. Please see pages 8 and 9 for date code information for Variation 1 and Variation 2 of the 119-bump BGA.
Rev: 1.04 5/2006
10/11
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS78108AB
Revision History Rev. Code: Old; New
GS78108AB_r1 GS78108AB_r1_01 GS78108AB_r1_01; GS78108AB_r1_02 GS78108AB_r1_02; GS78108AB_r1_03 GS78108AB_r1_03; GS78108AB_r1_04 Content Content/Format Content Content
Types of Changes Format or Content
Page #/Revisions/Reason
* Creation of new datasheet * Added AC specifications to datasheet * Updated format * Added variation information to package mechanical * Added Variation 2 119 BGA to datasheet * Added date codes to mechanicals * Added RoHS-compliant package information
Rev: 1.04 5/2006
11/11
(c) 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.


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